High current density 2D/3D MoS2/GaN Esaki tunnel diodes
Abstract
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at −1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 31, 2016
- Source ID
- 10.1063/1.4966283
Entities
People
- Choong Hee Lee
- Edwin W. Lee Ii
- Jared Johnson
- Jinwoo Hwang
- Siddharth Rajan
- Sriram Krishnamoorthy
- William D McCulloch
- Yiying Wu
- Yuewei Zhang
Organizations
- Air Force Office of Scientific Research
- Ohio State University