High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

Abstract

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1–5 THz frequency range with the power levels as high as 300 μW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 07, 2016
Source ID
10.1063/1.4967440

Entities

People

  • Hong Lu
  • Mona Jarrahi
  • Nezih Tolga Yardimci

Organizations

  • Nanjing University
  • National Institutes of Health
  • Office of Naval Research Global
  • University of California, Los Angeles

Tags

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy