Gain spectroscopy of a type-II VECSEL chip
Abstract
Using optical pump–white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron–hole scattering.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 05, 2016
- Source ID
- 10.1063/1.4971333
Entities
People
- A. Rahimi-iman
- A. Ruiz Perez
- C. Berger
- C. Lammers
- C. Möller
- Christian Fuchs
- J. Hader
- Jerome V. Moloney
- M. Koch
- M. Stein
- Stephan W. Koch
- W. Stolz
Organizations
- Air Force Office of Scientific Research
- German Research Foundation
- University of Arizona
- University of Marburg