Structural properties of Co2TiSi films on GaAs(001)
Abstract
Co2TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the L21 and B2 structures and considering the influence of non-stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13 nm, these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found L21 and B2 ordered regions, however the [Co]/[Ti]-ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic B2-ordering with the best order parallel to the axes of the columns.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 08, 2016
- Source ID
- 10.1063/1.4971344
Entities
People
- A. Trampert
- Achim Trampert
- Bernd Jenichen
- H. Kirmse
- J. Herfort
- M. Hanke
- S. C. Erwin
- U. Jahn
- Xianghong Kong
Organizations
- Humboldt-Universität zu Berlin
- United States Naval Research Laboratory