Interband and intraband relaxation dynamics in InSb based quantum wells
Abstract
We utilize pump/probe spectroscopy to determine the interband and intraband relaxation dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we observed several time scales for relaxation. One time scale τ3 ranging from 2 ps to 5 ps is due to the intraband relaxation dynamics. Here, both the emission of LO phonons (within the Γ valley) and carrier scattering between the X, L, and Γ valleys contribute to the relaxation. An observed longer relaxation time, τ2 ≈ 20 ps, is attributed to electron–hole recombination across the gap (the interband relaxation time). Finally, using a mid-infrared (MIR) degenerate pump/probe scheme, we observed a very fast relaxation time of ∼1 ps, which is due to the saturation of the band-to-band absorption. Our results are important for developing concepts for InSb devices operating in the THz or MIR optical ranges with the endless need for faster response.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 15, 2016
- Source ID
- 10.1063/1.4971347
Entities
People
- Christopher J. Stanton
- Dipanjan Saha
- G. A. Khodaparast
- G. D. Sanders
- M. B. Santos
- Mithun Bhowmick
- T. D. Mishima
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- University of Florida
- University of Oklahoma
- Virginia Tech