The effect of illumination power density on carbon defect configuration in silicon doped GaN
Abstract
A study of efficacy of point defect reduction via Fermi level control during growth of GaN:Si as a function of above bandgap illumination power density and hence excess minority carrier density is presented. Electrical characterization revealed an almost two-fold increase in carrier concentration and a three-fold increase in mobility by increasing the illumination power density from 0 to 1 W cm−2, corroborating a decrease in compensation and ionic impurity scattering. The effect was further supported by the photoluminescence studies, which showed a monotonic decrease in yellow luminescence (attributed to CN) as a function of illumination power density. Secondary ion mass spectroscopy studies showed no effect of illumination on the total incorporation of Si or C. Thus, it is concluded that Fermi level management changed the configuration of the C impurity as the CN−1 configuration became energetically less favorable due to excess minority carriers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 19, 2016
- Source ID
- 10.1063/1.4972468
Entities
People
- Alexander Franke
- Andrew Klump
- Axel Hoffmann
- Dorian Alden
- Felix Kaess
- Luis H. Hernandez-balderrama
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Zlatko Sitar
Organizations
- Army Research Office
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- North Carolina State University
- Pacific Northwest Foundation
- Technische Universität Berlin