Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
Abstract
Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220–250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%–11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6–9 nm.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 02, 2017
- Source ID
- 10.1063/1.4973581
Entities
People
- Fernando Agustín Ponce
- Hongen Xie
- Karan Mehta
- Paul D. Yoder
- Russell D. Dupuis
- Shuo Wang
- Shyh-chiang Shen
- Theeradetch Detchprohm
- Tsung-ting Kao
- Yuh-shiuan Liu
Organizations
- Arizona State University
- Defense Advanced Research Projects Agency
- Georgia Tech
- National Science Foundation