Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor
Abstract
We have measured both the current-voltage (ISD-VGS) and capacitance-voltage (C-VGS) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured ISD-VGS characteristics over the entire range of VGS. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 09, 2017
- Source ID
- 10.1063/1.4973862
Entities
People
- Achim Wixforth
- Andreas L. Hörner
- Ariana E. Nguyen
- Benjamin Möller
- Edwin Preciado
- Florian J. R. Schülein
- Gretel Von Son
- Hubert J Krenner
- John Mann
- Ludwig Bartels
- Wladislaw Michailow
Organizations
- Defense Advanced Research Projects Agency
- German Research Foundation
- Nanosystems Initiative Munich
- National Science Foundation
- Pepperdine University
- University of Augsburg
- University of California