Electrical switching of antiferromagnets via strongly spin-orbit coupled materials
Abstract
Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 13, 2017
- Source ID
- 10.1063/1.4974027
Entities
People
- K. W. Kim
- Xi-lai Li
- Xiaopeng Duan
- Yuriy G. Semenov
Organizations
- Army Research Office
- North Carolina State University
- Semiconductor Research Corporation