Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon
Abstract
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 23, 2017
- Source ID
- 10.1063/1.4974536
Entities
People
- D. M. Zajac
- J. Stehlik
- J. V. Cady
- Jason R Petta
- L. F. Edge
- X. Mi
Organizations
- Army Research Office
- HRL Laboratories
- National Science Foundation
- Princeton University