Displacement damage and predicted non-ionizing energy loss in GaAs
Abstract
Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been applied to study the defect production for lattice atom recoil energies from 500 eV to 20 keV in gallium arsenide (GaAs). At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters. However, a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies larger than 2 keV. The results reveal a non-linear defect production that increases with the PKA energy. The damage density within a cascade core is evaluated, and used to develop a model that describes a new energy partition function. Based on the MD results, we have developed a model to determine the non-ionizing energy loss (NIEL) in GaAs, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The calculated NIEL predictions are compared with the available data, thus validating the NIEL model developed in this study.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 07, 2017
- Source ID
- 10.1063/1.4977861
Entities
People
- Danhong Huang
- Efrain Hernandez-rivera
- Fei Gao
- Nanjun Chen
- Paul D. Levan
Organizations
- Air Force Research Laboratory
- University of Michigan