Synthesis of second-order nonlinearities in dielectric-semiconductor-dielectric metamaterials
Abstract
We demonstrate a large effective second-order nonlinear optical susceptibility in electronic optical metamaterials based on sputtered dielectric-semiconductor-dielectric multilayers of silicon dioxide/amorphous silicon (a-Si)/aluminum oxide. The interfacial fixed charges (Qf) with opposite signs on either side of dielectric-semiconductor interfaces result in a non-zero built-in electric field within the a-Si layer, which couples to the large third-order nonlinear susceptibility tensor of a-Si and induces an effective second-order nonlinear susceptibility tensor χeff(2). The value of the largest components of the effective χeff(2) tensor, i.e., χ(2)zzz, is determined experimentally to be 2 pm/V for the as-fabricated metamaterials and increases to 8.5 pm/V after the post-thermal annealing process. The constituents and fabrication methods make these metamaterials CMOS compatible, enabling efficient nonlinear devices for chip-scale silicon photonic integrated circuits.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 13, 2017
- Source ID
- 10.1063/1.4978640
Entities
People
- Christian Wurm
- Eric E Fullerton
- Felipe Vallini
- Hung-hsi Lin
- Matthew W. Puckett
- Mu-han Yang
- Rajat Sharma
- Sergio Montoya
- Yeshaiahu Fainman
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research
- University of California