Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy
Abstract
The effects of room temperature 6 MeV electron irradiation on the donor concentration, deep trap spectra, and diffusion lengths of nonequilibrium charge carriers were studied for undoped n-GaN grown by hydride vapor phase epitaxy. Changes in these parameters begin at a threshold electron fluence of 5 × 1015 cm−2. The diffusion lengths after this fluence decrease by a factor of 3, accompanied by a drastic increase in the density of deep electron traps with the level near Ec – 1 eV. There is a strong correlation between the changes in the density of these traps and the diffusion length of irradiated n-GaN, indicating that these centers control the lifetime in radiation damaged n-GaN. This is in sharp contrast to the starting material, where the lifetimes are controlled by other deep electron traps at Ec – 0.56 eV. The concentration of the latter is not strongly affected by high energy electron irradiation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 13, 2017
- Source ID
- 10.1063/1.4978641
Entities
People
- A. Y. Polyakov
- Eugene Yakimov
- I. V. Shchemerov
- In-hwan Lee
- K. I. Tapero
- N. B. Smirnov
- R. A. Zinovyev
- S. I. Didenko
- Stephen Pearton
- С. А. Тарелкин
Organizations
- Defense Threat Reduction Agency
- Jeonbuk National University
- Ministry of Education and Science of the Russian Federation
- National Research Foundation of Korea
- National University of Science and Technology
- Russian Academy of Sciences
- University of Florida