Upscaling high-quality CVD graphene devices to 100 micron-scale and beyond
Abstract
We describe a method for transferring ultra large-scale chemical vapor deposition-grown graphene sheets. These samples can be fabricated as large as several cm2 and are characterized by magneto-transport measurements on SiO2 substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 13, 2017
- Source ID
- 10.1063/1.4978643
Entities
People
- Alba Centeno
- Amaia Pesquera
- Amaia Zurutuza
- August Dorn
- Jonas Sichau
- Robert H Blick
- T. J. Lyon
Organizations
- Air Force Office of Scientific Research
- German Research Foundation
- University of Hamburg