Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering
Abstract
The competition of electron-electron interband scattering (ee) and longitudinal optical phonon emission (e-ph) as electron capture mechanisms is theoretically investigated in III-nitride quantum wells. The non-trivial separation of their scattering probabilities is discussed, and compact expressions for capture time are obtained in the framework of the quantum many-body formalism. At the typical operating conditions of light emitting diodes (LEDs), the model predicts an increasing importance of ee scattering as a capture mechanism with increasing carrier density. Verifications against recent experiments are presented to support this finding and confirm the need for population-dependent capture time expressions including both ee and e-ph mechanisms for an accurate description of LED carrier dynamics and efficiency.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 27, 2017
- Source ID
- 10.1063/1.4979010
Entities
People
- Francesco Bertazzi
- Giovanni Ghione
- Marco Vallone
- Michele Goano
Organizations
- Polytechnic University of Turin
- United States Army Research Laboratory