On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip
Abstract
A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2017
- Source ID
- 10.1063/1.4979480
Entities
People
- Anirudha V Sumant
- Derrick C. Mancini
- Hao-chih Yuan
- Hongyi Mi
- Jung-Hun Seo
- Orlando H. Auciello
- Robert Carpick
- Sergio P. Pacheco
- Zhenqiang Ma
Organizations
- Argonne National Laboratory
- Defense Advanced Research Projects Agency
- Freescale Semiconductor
- United States Department of Energy
- University of Wisconsin–Madison