Hot electron inelastic scattering and transmission across graphene surfaces
Abstract
Inelastic scattering and transmission of externally injected hot carriers across graphene layers are considered as a function of graphene carrier density, temperature, and surrounding dielectric media. A finite temperature dynamic dielectric function for graphene for an arbitrary momentum q and frequency ω is found under the random phase approximation and a generalized scattering lifetime formalism is used to calculate the scattering and transmission rates. Unusual trends in scattering are found, including declining rates as graphene carrier density increases and interband transition excitations, which highlights the difference with out-of-plane as compared to in-plane transport. The results also show strong temperature dependence with a drastic increase in scattering at room temperature. The calculated scattering rate at T = 300 K shows a wide variation from 0.2 to 10 fs−1 depending on graphene carrier density, incident carrier momentum, and surrounding dielectrics. The analysis suggests that a transmission rate greater than 0.9 for a carrier with kinetic energy over 1 eV is achievable by carefully controlling the graphene carrier density in conjunction with the use of high-κ dielectric materials. Potential applications to electronic and electro-optical devices are also discussed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 15, 2017
- Source ID
- 10.1063/1.4984590
Entities
People
- Byoung Don Kong
- J. Brad Boos
- James G. Champlain
Organizations
- National Academies of Sciences, Engineering, and Medicine
- Office of Naval Research
- United States Naval Research Laboratory