Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate
Abstract
Heterostructures of AlGaN with multiple quantum wells were grown by metal-organic vapor phase epitaxy on semipolar (20-21) bulk AlN substrates. Smooth epitaxial surfaces with excellent heterostructure interfaces were demonstrated. Luminescence from the AlGaN multiple quantum wells emitting at λ = 237 nm show a substantial degree of polarization of about 35% as determined by low-temperature photoluminescence measurements.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 11, 2017
- Source ID
- 10.1063/1.4985156
Entities
People
- Mark Teepe
- Martin Feneberg
- Max Batres
- Noble Johnson
- Thomas Wunderer
- Zhihong Yang
Organizations
- Defense Advanced Research Projects Agency
- PARC
- University of Magdeburg