Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions
Abstract
The valence-band offsets, ΔEv, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In0.53Ga0.47As and In0.52Al0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As, respectively. By combining these measurements with previously reported XPS ΔEv (In0.53Ga0.47As/In0.52Al0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSb and In0.53Ga0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In0.53Ga0.47As and In0.52Al0.48As. Good agreement is found between the calculated valence-band offsets and those determined from XPS.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 07, 2017
- Source ID
- 10.1063/1.4985200
Entities
People
- A. Janotti
- Anthony D. Rice
- Anthony McFadden
- Ashwini Sharan
- C. J. Palmstrøm
- D. J. Pennachio
- John A Logan
- Mihir Pendharkar
- N. S. Wilson
- Sean Harrington
- Z. Gui
Organizations
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of Delaware