Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure
Abstract
A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was comprehensively characterized. Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 22, 2017
- Source ID
- 10.1063/1.4986341
Entities
People
- Baohua Li
- Greg Sun
- Jifeng Liu
- Joe Margetis
- John Tolle
- Mansour Mortazavi
- Richard Soref
- Sattar Al-Kabi
- Seyed Amir Ghetmiri
- Shui-Qing Yu
- Wei Du
- Yiyin Zhou
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Dartmouth College
- Experimental Program to Stimulate Competitive Research
- National Science Foundation
- University of Arkansas
- University of Arkansas at Pine Bluff
- University of Massachusetts