Molecular beam epitaxial growth and characterization of AlN nanowall deep UV light emitting diodes
Abstract
We have demonstrated large area AlN nanowall light emitting diodes grown on a sapphire substrate, which operate at 214 nm. Through detailed temperature-dependent and power-dependent photoluminescence measurements and rate equation analysis, a relatively high internal quantum efficiency (∼60%) was derived for AlN nanowall structures at room-temperature. A consistent blueshift in the emission wavelengths was measured with decreasing nanowall widths due to the reduced tensile strain distribution. The devices exhibit excellent current-voltage characteristics, including a turn-on voltage of 7 V and current densities of >170 A/cm2 at 12 V.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 04, 2017
- Source ID
- 10.1063/1.4989551
Entities
People
- Binh Huy Le
- Songrui Zhao
- Xianhe Liu
- Zetian Mi
Organizations
- Army Research Office
- McGill University
- Natural Sciences and Engineering Research Council
- University of Michigan