Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy
Abstract
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on currents ∼10 kA/cm2, low off currents <10−5 A/cm2, on/off current ratio of >109, and interband photon emission. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field of ∼2.2 MV/cm without fields plates—the highest reported for N-polar epitaxial structures. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 19, 2017
- Source ID
- 10.1063/1.4989581
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Kazuki Nomoto
- Yong-Jin Cho
- Zongyang Hu
Organizations
- Cornell University
- Defense Advanced Research Projects Agency
- Semiconductor Research Corporation