Nonlinear terahertz metamaterials with active electrical control

Abstract

We present a study of an electrically modulated nonlinear metamaterial consisting of an array of split-ring resonators fabricated on n-type gallium arsenide. The resonant metamaterial nonlinearity appears as an intensity-dependent transmission minimum at terahertz frequencies and arises from the interaction between local electric fields in the split-ring resonator (SRR) capacitive gaps and charge carriers in the n-type substrate. We investigate the active tuning range of the metamaterial device as the incident terahertz field intensity is increased and conversely the effect of an applied DC bias on the terahertz field-induced nonlinear modulation of the metamaterial response. Applying a DC bias to the metamaterial sample alters the nonlinear response and reduces the net nonlinear modulation. Similarly, increasing the incident terahertz field intensity decreases the net modulation induced by an applied DC bias. We interpret these results in terms of DC and terahertz-field-assisted carrier acceleration, scattering, and multiplication processes, highlighting the unique nature of this DC-field modulated terahertz nonlinearity.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 18, 2017
Source ID
10.1063/1.4990671

Entities

People

  • Andrew J. Taylor
  • C. Tulloss
  • D. M. Mittleman
  • G. R. Keiser
  • Hou-Tong Chen
  • I. Brener
  • J. L. Reno
  • N. Karl
  • P. Q. Liu

Organizations

  • Army Research Office
  • Brown University
  • Los Alamos National Laboratory
  • National Science Foundation
  • Sandia National Laboratories
  • University at Buffalo
  • Washington College

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics