Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection
Abstract
Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. It is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 26, 2017
- Source ID
- 10.1063/1.4990677
Entities
People
- Clive A. Randall
- Jared J. Carter
- Jian-Jun Wang
- Long-Qing Chen
- Rui Wang
- Thorsten J M Bayer
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Pennsylvania State University
- United States Department of Energy