Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
Abstract
Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (201¯) orientation. An average conductivity of 732 S cm−1 with a mobility of 26.5 cm2 V−1 s−1 and a carrier concentration of 1.74 × 1020 cm−3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 03, 2017
- Source ID
- 10.1063/1.4991363
Entities
People
- Andrew J. Green
- Antonio Crespo
- D. C. Look
- Darren B. Thomson
- Gregg H. Jessen
- Jeff L. Brown
- John J. Boeckl
- Jonathan P. McCandless
- Kelson D. Chabak
- Kevin D. Leedy
- Neil A. Moser
- Robert C. Fitch
- Stephen E. Tetlak
- Vladimir Vasilyev
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- George Mason University
- Wright State University