Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Abstract
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 10, 2017
- Source ID
- 10.1063/1.4993569
Entities
People
- Aaron R. Arehart
- Chandan Joishi
- Jared Johnson
- Jinwoo Hwang
- Joe F. McGlone
- Mark Brenner
- Saurabh Lodha
- Siddharth Rajan
- Sriram Krishnamoorthy
- Yuewei Zhang
- Zhanbo Xia
Organizations
- Office of Naval Research
- Ohio State University