Effect of chemical pressure on the electronic phase transition in Ca1−xSrxMn7O12 films

Abstract

We demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn7O12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We have synthesized Ca1−xSrxMn7O12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstrate that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. The presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca1−xSrxMn7O12 in sensors or oxide electronics, for example, via charge doping.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 01, 2017
Source ID
10.1063/1.4994089

Entities

People

  • A. Herklotz
  • A. Huon
  • Dongkyu Lee
  • Ho Nyung Lee
  • M. R. Fitzsimmons
  • S. J. May

Organizations

  • Army Research Office
  • Drexel University
  • Oak Ridge National Laboratory
  • United States Department of Energy
  • University of Tennessee

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene