Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
Abstract
This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 20, 2017
- Source ID
- 10.1063/1.4994648
Entities
People
- Andrew Aragon
- Arman Rashidi
- Ashwin K. Rishinaramangalam
- D. Feezell
- F. Ayoub
- K. Davico
- Mohsen Nami
- Morteza Monavarian
- S. Mishkat-ul-masabih
Organizations
- United States Department of Defense
- University of New Mexico