Al transmon qubits on silicon-on-insulator for quantum device integration
Abstract
We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 24, 2017
- Source ID
- 10.1063/1.4994661
Entities
People
- A. J. Keller
- Brett Berger
- Johannes M Fink
- Michael Fang
- Oskar Painter
- Paul B. Dieterle
Organizations
- Air Force Office of Scientific Research
- California Institute of Technology
- Gordon and Betty Moore Foundation
- National Science Foundation