Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates
Abstract
Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 24, 2017
- Source ID
- 10.1063/1.4995559
Entities
People
- Chao Yang
- Haomin Wang
- Tianru Wu
- Xiaoming Xie
- Xuefu Zhang
- Zhiyuan Shi
Organizations
- Air Force Office of Scientific Research
- National Natural Science Foundation of China
- Robert A. Welch Foundation
- Shanghai Institute of Microsystem and Information Technology