Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
Abstract
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2017
- Source ID
- 10.1063/1.4996172
Entities
People
- Akito Kuramata
- David C. Hays
- F. Ren
- Ivan Kravchenko
- Jiancheng Yang
- Patrick H. Carey
- Soohwan Jang
- Stephen Pearton
Organizations
- Dankook University
- Defense Threat Reduction Agency
- Ministry of Science, ICT and Future Planning
- National Research Foundation of Korea
- New Energy and Industrial Technology Development Organization
- Novel Crystal Technology, Inc.
- Oak Ridge National Laboratory
- Tamura Corporation
- United States Department of Energy
- University of Florida