Parameter dependence of high-frequency nonlinear oscillations and intrinsic chaos in short GaAs/(Al, Ga)As superlattices

Abstract

We explore the design parameter space of short (5–25 period), n-doped, Ga/(Al,Ga)As semiconductor superlattices (SSLs) in the sequential resonant tunneling regime. We consider SSLs at cool (77 K) and warm (295 K) temperatures, simulating the electronic response to variations in (a) the number of SSL periods, (b) the contact conductivity, and (c) the strength of disorder (aperiodicities). Our analysis shows that the chaotic dynamical phases exist on a number of sub-manifolds of codimension zero within the design parameter space. This result provides an encouraging guide towards the experimental observation of high-frequency intrinsic dynamical chaos in shorter SSLs.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 01, 2018
Source ID
10.1063/1.4997477

Entities

People

  • Bjorn Birnir
  • Ian Jenkins
  • Jonathan Essen
  • Luis López Bonilla
  • Manuel Carretero
  • Miguel Ruiz-Garcia

Organizations

  • Ministry of Economy, Industry and Competitiveness
  • United States Army Research Laboratory
  • Universidad Carlos III de Madrid
  • University of Iceland

Tags

Readers

  • Naval Mine Countermeasure Systems Development.
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space