Evidence of a topological Hall effect in Eu1−xSmxTiO3

Abstract

We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1−xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ∼5 K and additional features that appear at 2 K. It is shown that these features are magnetic in origin and consistent with the topological Hall effect seen in material systems with topologically nontrivial spin textures such as skyrmions. The results open up interesting possibilities for epitaxial hybrid heterostructures that combine topological magnetic states, tunable carrier densities, and other phenomena.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 23, 2017
Source ID
10.1063/1.4997498

Entities

People

  • Kaveh Ahadi
  • Luca Galletti
  • Susanne Stemmer

Organizations

  • Army Research Office
  • National Science Foundation

Tags

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene