Oxygen-induced giant grain growth in Ag films
Abstract
Thin film crystallites typically exhibit normal or abnormal growth with maximum grain size limited by energetic and geometric constraints. Although epitaxial methods have been used to produce large single crystal regions, they impose limitations that preclude some compelling applications. The generation of giant grain thin film materials has broad implications for fundamental property analysis and applications. This work details the production of giant grains in Ag films (2.5 μm-thick), ranging in size from ≈50 μm to 1 mm, on silicon nitride films upon silicon substrates. The presence of oxygen during film deposition plays a critical role in controlling grain size and orientation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 16, 2017
- Source ID
- 10.1063/1.4998741
Entities
People
- Andrew J. Birnbaum
- Athanasios Iliopoulos
- Carl V. Thompson
- J. G. Michopoulos
- John C. Steuben
Organizations
- Massachusetts Institute of Technology
- Office of Naval Research
- United States Naval Research Laboratory