Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Abstract
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K despite the high concentration (1.2 × 1011 cm−2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects—possibly (BaO)2 crystallographic shear defects or point defects—significantly reduce the electron mobility.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2017
- Source ID
- 10.1063/1.5001839
Entities
People
- Amit Verma
- Ariel Seidner H.
- Bi-Cheng Zhou
- Darrell G. Schlom
- David A. Muller
- Debdeep Jena
- Edward B. Lochocki
- Hanjong Paik
- Jisung Park
- Kyle. M. Shen
- Mario Brützam
- Masaki Uchida
- Nicholas Tanen
- Reinhard Uecker
- Shunli Shang
- Zhen Chen
- Zi-Kui Liu
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Indian Institute of Technology Kanpur
- Leibniz Institute for Crystal Growth
- National Science Foundation
- Pennsylvania State University
- University of Tokyo