Resonance-free optical response of a vertical cavity transistor laser
Abstract
Optical resonance in a semiconductor laser is a major limitation in high speed data communications, resulting in bit error rate degradation and requiring additional power consuming error-correction circuits to counter these effects. In this work, we report the microwave bandwidth measurement of a vertical cavity transistor laser with an oxide-confined aperture of 4.7 × 5.4 μm2 and demonstrate a 3 dB bandwidth of 11 GHz resonance-free optical response via base-current or collector-voltage modulation. The emission spectra exhibit single-mode operation around 970 nm with a narrow linewidth of Δλ ∼ 0.23 Å (cavity Q of 42 216). The resonance-free optical response is explained by the absence of carrier “accumulating” due to the fast base electron-hole recombination lifetimes and a gradient in the minority carrier charge in the transistor active mode.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 18, 2017
- Source ID
- 10.1063/1.5004133
Entities
People
- Chao-Hsin Wu
- Cheng-han Wu
- M. K. Wu
- MengKe Feng
- N. Holonyak Jr.
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science and Technology Council
- University of Illinois Urbana–Champaign