Stark tuning and electrical charge state control of single divacancies in silicon carbide
Abstract
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects and hinders their coupling to optical cavities. Here, we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show that both 975 nm and 1130 nm excitation can prepare their neutral charge state with near unity efficiency.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 25, 2017
- Source ID
- 10.1063/1.5004174
Entities
People
- Charles F. De Las Casas
- David Awschalom
- David J Christle
- Jawad ul Hassan
- Nguyen T. Son
- Takeshi Ohshima
Organizations
- Air Force Office of Scientific Research
- Formas
- Japan Society for the Promotion of Science
- Linköping University
- National Institute of Radiological Sciences
- National Science Foundation
- Swedish Energy Agency
- United States Army Research Laboratory
- University of Chicago