A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy
Abstract
Electron paramagnetic resonance (EPR) spectroscopy was used to investigate a type of point defect present in 1019 cm−3 carbon-doped GaN substrates grown by hydride vapor phase epitaxy. A broad, isotropic resonance at g ∼ 1.987 was observed at 3.5 K, and the EPR intensity increased with illumination at energies greater than 2.75 eV and decreased with photon energies greater than 0.95 eV. The latter is consistent with a deep level of 0.95 eV above the valence band maximum and implies that the associated defect likely participates in donor compensation. The ionization energy for this defect is close to the predicted value for the (−/0) transition level of CN and transition levels associated with Ga vacancies such as VGa and VGa-ON-2H.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 18, 2017
- Source ID
- 10.1063/1.5004411
Entities
People
- M. E. Zvanut
- Małgorzata Iwińska
- Michal Boćkowski
- Subash Paudel
- Tomasz Sochacki
- W. R. Willoughby
Organizations
- Nagoya University
- National Centre for Research and Development in Poland
- National Science Foundation
- Office of Naval Research
- Polish Academy of Sciences
- University of Alabama at Birmingham