High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance
Abstract
We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the ID of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at VDS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 25, 2017
- Source ID
- 10.1063/1.5004799
Entities
People
- Dong Gyu Lee
- Hyunsoo Kim
- Jae-Hyun Ryou
- James Dallas
- Jie Chen
- Joon Seop Kwak
- Moon Uk Cho
- Sara Pouladi
- Seung Kyu Oh
- Seungha Shin
- Shahab Shervin
- Sukwon Choi
- Taehoon Jang
- Weijie Wang
Organizations
- Air Force Office of Scientific Research
- Jeonbuk National University
- Korea Institute for Advancement of Technology
- Korea Planning & Evaluation Institute of Industrial Technology
- National Research Foundation of Korea
- Pennsylvania State University
- Sunchon National University
- Texas Center for Superconductivity
- University of Houston
- University of Tennessee