Intrinsic stress response of low and high mobility solute additions to Cu thin films
Abstract
Thin film stress is frequently controlled through adjustments applied to the processing parameters used during film deposition. In this work, we explore how the use of solutes with different intrinsic growth properties influences the residual growth stress development for a common solvent Cu film. The findings demonstrated that the addition of a high atomic mobility solute, Ag, or a low atomic mobility solute, V, results in both alloy films undergoing grain refinement that scaled with increases in the solute content. This grain refinement was associated with solute segregation and was more pronounced in the Cu(Ag) system. The grain size reduction was also associated with an increase in the tensile stresses observed in both alloy sets. These findings indicate that solutes can be used to control the grain size under the same deposition conditions, as well as alter the stress evolution of a growing thin film.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 12, 2017
- Source ID
- 10.1063/1.5008269
Entities
People
- Gregory B. Thompson
- Ryan Anthony
- Tyler Kaub
Organizations
- Army Research Office
- University of Alabama