Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

Abstract

We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MARs) in a bulk-insulating BiSbTeSe2 topological insulator nanoribbon (TINR) Josephson junction with superconducting Nb contacts. We observe a gate-tunable critical current (IC) for gate voltages (Vg) above the charge neutrality point (VCNP), with IC as large as 430 nA. We also observe MAR peaks in the differential conductance (dI/dV) versus DC voltage (Vdc) across the junction corresponding to sub-harmonic peaks (at Vdc = Vn = 2ΔNb/en, where ΔNb is the superconducting gap of the Nb contacts and n is the sub-harmonic order). The sub-harmonic order, n, exhibits a Vg-dependence and reaches n = 13 for Vg = 40 V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 26, 2018
Source ID
10.1063/1.5008746

Entities

People

  • Aleksandr Kazakov
  • Ireneusz Miotkowski
  • Leonid P. Rokhinson
  • Luis A. Jauregui
  • Morteza Kayyalha
  • Yong P. Chen

Organizations

  • Division of Materials Research
  • Purdue University
  • Tohoku University
  • United States Department of Energy

Tags

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Electrochemical Surface Science
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene