On the feasibility of p-type Ga2O3

Abstract

We investigate the various cation substitutional dopants in Ga2O3 for the possibility of p–type conductivity using density functional theory. Our calculations include both standard density functional theory and hybrid functional calculations. We demonstrate that all the investigated dopants result in deep acceptor levels, not able to contribute to the p–type conductivity of Ga2O3. In light of these results, we compare our findings with other wide bandgap oxides and reexamine previous experiments on zinc doping in Ga2O3.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 15, 2018
Source ID
10.1063/1.5009423

Entities

People

  • Alexandros Kyrtsos
  • E. Bellotti
  • Masahiko Matsubara

Organizations

  • Army Research Office
  • Boston University
  • United States Army Research Laboratory

Tags

Fields of Study

  • Materials science

Readers

  • Defense Acquisition Program Management
  • Semiconductor Device Technology
  • Theoretical Analysis.