Extended band anti-crossing model for dilute bismides

Abstract

Bandstructure properties of dilute bismide bulk systems are calculated using density functional theory. An extended band anti-crossing model is introduced to fit the obtained results. Using these as inputs for a fully microscopic many-body theory, absorption and photoluminescence spectra are computed for bulk and quantum-well systems. Comparison to experimental results identifies the applicability range of the new anti-crossing model.

Document Details

• Document Type: Pub Defense Publication
• Publication Date: Feb 05, 2018
• Source ID: 10.1063/1.5009668

Entities

People

• J. Hader
• Jerome V. Moloney
• Lars C. Bannow
• S. R. Johnson
• Stephan W. Koch
• Ştefan C. Bǎdescu

Organizations

• Air Force Office of Scientific Research
• Air Force Research Laboratory
• Arizona State University
• German Research Foundation
• University of Marburg

Tags

Fields of Study

• Physics

Readers

• Computational Modeling and Simulation
• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

• Quantum Computing