High spatial frequency periodic structures formation on silicon using near UV femtosecond laser irradiation
Abstract
Observation of a nanoscale island-like periodic surface structure in silicon using 390 nm ultrafast laser irradiation in vacuum is reported. A strong correlation is observed between the island structure and the formation of a high-spatial frequency laser induced periodic surface structure below the single pulse melt threshold. Further hexagonal and quasi-hexagonal arrangements of the islands concurrent with bifurcation suggest the existence of a strain ordering mechanism. Island bifurcation suggests a high stress state induced by point-defect generation during and after femtosecond laser induced band-gap closure.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 15, 2018
- Source ID
- 10.1063/1.5009776
Entities
People
- Ben Torralva
- Rico S. Cahyadi
- Steven M. Yalisove
Organizations
- Air Force Office of Scientific Research
- University of Michigan