431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
Abstract
We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370–385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 15, 2018
- Source ID
- 10.1063/1.5010794
Entities
People
- David F. Storm
- David J. Meyer
- Elliott R. Brown
- Katurah Hansen
- Parastou Fakhimi
- Paul R. Berger
- Tyler A Growden
- Weidong Zhang
Organizations
- Office of Naval Research
- Ohio State University
- United States Naval Research Laboratory
- Wright State University