Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
Abstract
We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/ml. The glass slide approach is attractive for inexpensive cartridge-type sensors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 13, 2017
- Source ID
- 10.1063/1.5011151
Entities
People
- Fan Ren
- Jiancheng Yang
- Michael A. Mastro
- Michael L. Good
- Patrick H. Carey
- Soohwan Jang
- Stephen Pearton
- Yu-lin Wang
Organizations
- Dankook University
- National Research Foundation of Korea
- National Science and Technology Council
- National Tsing Hua University
- United States Naval Research Laboratory
- University of Florida