Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
Abstract
The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm−2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 19, 2018
- Source ID
- 10.1063/1.5011971
Entities
People
- Boris Meyler
- Elena Flitsiyan
- Fan Ren
- Jiancheng Yang
- Jonathan Lee
- Leonid Chernyak
- Stephen Pearton
- Y. Joseph Salzman
Organizations
- Defense Threat Reduction Agency
- National Science Foundation
- University of Central Florida
- University of Florida