Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
Abstract
Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350–380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm−2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 15, 2018
- Source ID
- 10.1063/1.5012993
Entities
People
- A. Kuramata
- A. Y. Polyakov
- Eugene Yakimov
- F. Ren
- Gwangseok Yang
- I. V. Shchemerov
- Jiancheng Yang
- Jihyun Kim
- N. B. Smirnov
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- Korea University
- Ministry of Education and Science of the Russian Federation
- Ministry of Trade, Industry and Energy
- National University of Science and Technology
- New Energy and Industrial Technology Development Organization
- Russian Academy of Sciences
- Tamura Corporation
- University of Florida