Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Abstract
This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 01, 2018
- Source ID
- 10.1063/1.5020035
Entities
People
- Andrian V Kuchuk
- Baohua Li
- Greg Sun
- Grey Abernathy
- Jifeng Liu
- Joe Margetis
- John Tolle
- Mansour Mortazavi
- Perry C. Grant
- Richard Soref
- Shui-Qing Yu
- Wei Dou
- Wei Du
- Yiyin Zhou
Organizations
- Air Force Office of Scientific Research
- Dartmouth College
- National Science Foundation
- University of Arkansas
- University of Arkansas at Pine Bluff
- University of Massachusetts
- Wilkes University