Controlling surface carrier density by illumination in the transparent conductor La-doped BaSnO3

Abstract

LaxBa1-xSnO3 is a promising transparent conducting oxide whose high mobility facilitates potential applications in transparent electronics, oxide electronics, and power electronics. Here, we report quantitative comparisons between angle-resolved photoemission and density functional theory, demonstrating a close agreement between calculations and the measured bulk electronic structure. Further measurements reveal upward band bending at the film-vacuum interface, while ultraviolet (UV) exposure is found to increase the surface electron density, similar to other oxides. These results elucidate the LaxBa1-xSnO3 (LBSO) interfacial electronic structure and offer a route for UV carrier density control, critical steps towards realizing LBSO-based electronic devices.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 30, 2018
Source ID
10.1063/1.5020716

Entities

People

  • Darrell G. Schlom
  • Edward B. Lochocki
  • Hanjong Paik
  • Kyle. M. Shen
  • Masaki Uchida

Organizations

  • Air Force Office of Scientific Research
  • Cornell University
  • Division of Electrical, Communications & Cyber Systems
  • Division of Materials Research
  • University of Tokyo

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene